| Permission | 3 nm – 30 kV (SE) | 7 nm – 3 kV (SE) | 4 nm – 30 kV (BSE) |
| Increase | 12x – 300000x |
| cathode type | Thermionic Tungsten Cathode |
| Accelerating Voltage | 200V – 30KV |
| Vacuum System | Turbomolecular Pump, Rotary Pump |
| detectors | SE, Semiconductor four-section BSE |
| table | With Five Degrees of Freedom |
| Table Travel Range | X,Y: 125 mm | Z: 50 mm | R: 360° | T: -10° – 90° |
| Maximum sample diameter | 270 mm |
| Additional options | EDS, CL, EBL, Airlock, Heating and Cooling Stage, Physical and Mechanical Testing Stage, etc. |
