| Resolution | 0.9 Nm – 15 kV (SE) | 1.6 Nm – 1 kV (SE) | 3nm – 30kV (ion column) |
| Increase | 12x – 2 500 000X |
| Cathode type | Schottky cathode |
| Ion source type | LMIS (GA) |
| accelerating voltage | 20 V – 30 kV (electronic column) | 500 V – 30 kV (ion column) |
| Detectors | SE, IN-LENS, semiconductor four-section BSE |
| Platen | With five degrees of freedom |
| Table movement range | X,Y: 110mm | Z: 65 mm | R: 360° | T: -10° – 70° |
| Additional options | EDS, EBSD, CL, STEM, Gateway, table with heating and cooling, table for physical and mechanical testing, etc. |
